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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 DESCRIPTION *With TO-3PML package *High breakdown voltage, high reliability. *High speed *Built in damper diode APPLICATIONS *Ultrahigh-definition CRT display *Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION * Maximum absolute ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 W CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 16 60 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 VF PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=5A;IB=1.2 A IC=5A;IB=1.2 A IC=100mA;IB=0 VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V IEC=7A 8 4 6 2.0 V 800 40 130 10 1 MIN TYP. MAX 5 1.5 UNIT V V V mA A mA Switching times tstg tf Storage time Fall time IC=5A;RL=33.3 IB1=1A;- IB2=2A VCC=200V 3.0 0.1 0.2 s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4123 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 4 |
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